Categories Research article Performance of Broken Gap MoO3/ZnS Heterojunctions as Abrupt Electronic Switches, MOSFETs, Negative Capacitance FETs and Bandpass Filters Suitable for 3G/4G Technologies Post author By vlad.ilie Post date May 22, 2022 No Comments on Performance of Broken Gap MoO3/ZnS Heterojunctions as Abrupt Electronic Switches, MOSFETs, Negative Capacitance FETs and Bandpass Filters Suitable for 3G/4G Technologies ← A preliminary test of a novel molten metal filler welding process → Experimental study on the dynamic characteristics of a gas turbine combustor burning syn-gas Leave a Reply Cancel replyYour email address will not be published. Required fields are marked *Comment * Name * Email * Website Save my name, email, and website in this browser for the next time I comment. Δ
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